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Effects of GaN Passivation With SiO2 and SiNx Studied by Photoluminescence and Surface Potential Electric Force Microscopy

著者名:
Chevtchenko, S.
Reshchikov, M. A.
Zhu, K.
Moon, Y. -T.
Baski, A. A.
Morkoc, H.
さらに 1 件
掲載資料名:
GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
892
発行年:
2006
開始ページ:
575
終了ページ:
580
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998469 [1558998462]
言語:
英語
請求記号:
M23500/892
資料種別:
国際会議録

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