Raman Scattering of Self-Assembled Gallium Nitride Nanorods Synthesized by Plasma-Assisted Molecular Beam Epitaxy
- 著者名:
Wang, D. Tin, C. -C. Williams, J. R. Park, M. Park, Y. S. Park, C. M. Kang, T. W. Yang, W. -C. - 掲載資料名:
- GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 892
- 発行年:
- 2006
- 開始ページ:
- 215
- 終了ページ:
- 220
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998469 [1558998462]
- 言語:
- 英語
- 請求記号:
- M23500/892
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
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3
国際会議録
Structural and optical properties of indium nitride grown by plasma-assisted molecular beam epitaxy
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Materials Research Society |
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