X-ray Standing Wave Investigations of Si Dopant Incorporation in GaN
- 著者名:
Siebert, M. Schmidt, Th. Flege, J. I. Zegenhagen, J. Lee, T. -L. Figge, S. Hommel, D. Falta, J. - 掲載資料名:
- GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 892
- 発行年:
- 2006
- 開始ページ:
- 35
- 終了ページ:
- 42
- 総ページ数:
- 8
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998469 [1558998462]
- 言語:
- 英語
- 請求記号:
- M23500/892
- 資料種別:
- 国際会議録
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