Growth of High Quality Ge Epitaxial Layer on Si(100) Substrate Using Ultra Thin Si0.5Ge0.5 Buffer

Growth of High Quality Ge Epitaxial Layer on Si(100) Substrate Using Ultra Thin Si0.5Ge0.5 Buffer

著者名:

掲載資料名:

Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

891

発行年:

2006

開始ページ:

315

終了ページ:

320

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998452 [1558998454]

言語:

英語

請求記号:

M23500/891

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015788
シリーズID:	PA00000011
会議名:	Symposium on progress in semiconductor materials
回次:	5th
会議開催地:	Boston, MA, USA
会議開催年:	2005.11.28-2005.12.01

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