Blank Cover Image

InAs/In0.15Ga0.85As1-xNx Quantum Dots for 1.5 μm Laser Applications

著者名:
掲載資料名:
Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
891
発行年:
2006
開始ページ:
185
終了ページ:
192
総ページ数:
8
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998452 [1558998454]
言語:
英語
請求記号:
M23500/891
資料種別:
国際会議録

類似資料:

1 国際会議録 Radiometric characterization of normal-incidence InAs/In0.15Ga0.85As quantum-dot detectors (Invited Paper)

Krishna, S., Raghavan, S., Stintz, A., Morath, C.P., Norton, H.E., Le, D.T., Cardimona, D.A., Kennerly, S.W.

SPIE-The International Society for Optical Engineering
7 国際会議録 Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures

Monemar, B., Bergman, J. P., Dalfors, J., Pozina, G., Sernelius, B. E., Holtz, P. O., Amano, H., Akasaki, I.

MRS - Materials Research Society
2 国際会議録 (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 μm low threshold lasers

Damilano, B., Barjon, J., Hugues, M., Duboz, J. -Y., Massies, J., Ulloa, J. -M., Montes, M., Hierro, A.

SPIE - The International Society of Optical Engineering
8 国際会議録 Analysis of the room temperature performance of 1.3-1.52 μm GalnNAs/GaAs LDs grown by MBE

Hierro, A., Ulloa, J. M., Montes, M., Damilano, B., Barjon, J., Hugues, M., Duboz, J. -Y., Massies, J.

SPIE - The International Society of Optical Engineering
3 国際会議録 Group-III Nitride Quantum Heterostructures Emitting in the Whole Visible Range

Grandjean, Nicolas, Damilano, Benjamin, Massies, Jean

Materials Research Society
9 国際会議録 Growth and Characterization of Mg0.15Zn0.85O Thin Films by Pulsed Laser Deposition

Wei Wei, Chunming Jin, Anand Doraiswamy, Roger J. Narayan, Jagdish Narayan

Materials Research Society
4 国際会議録 Fabrication and characterization of InAs quantum dot semiconductor optical amplifiers on InP operating at 1.5 μm

N. Kim, J. M. Oh, D. Lee, S. Pyun, D. Ko, J. Yoon, W. Jeong, J. Jang

SPIE - The International Society of Optical Engineering
10 国際会議録 Large-format 0.85- and 2.5-μm HgCdTe detector arrays for low-background applications

Love, P.J., Hoffman, A.W., Gulbransen, D.J., Murray, M.P., Ando, K.J., Therrien, N.J., Rosbeck, J.P., Holcombe, R.S.

SPIE - The International Society of Optical Engineering
5 国際会議録 Resonant Raman Scattering in GaN/Al0.15Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

Behr, D., Niebuhr, R., Obloh, H., Wagner, J., Bachem, K. H., Kaufmann, U.

MRS - Materials Research Society
11 国際会議録 Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

Helman, Ana, Moumanis, Khalid, Tehernycheva, Maria, Lusson, Alain, Julien, Francois, Damilano, Benjamin, Graudjean, …

Materials Research Society
6 国際会議録 Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures

Monemar,B., Bergman,J.P., Pozina,G., Dalfors,J., Sernelius,B.E., Holtz,P.O., Amano,H., Akasaki,I.

SPIE - The International Society for Optical Engineering
12 国際会議録 1.5 Micron InAs Quantum Dot Lasers Based on Metamorphic InGaAs/GaAs Heterostructures

Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maleev, N.A., Mikhrin, S.S., Vasil'ev, A.P., Nikitina, E.V., Semenova, E.S., …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12