Blank Cover Image

Influence of Traps on Carrier Concentration Profiles Measured by Capacitance-Voltage and Drive Level Profiling in CIGSe-Based Heterojunctions

著者名:
掲載資料名:
Thin-film compound semiconductor photovoltaics : symposium held March 29-April 1, 2005, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
865
発行年:
2005
開始ページ:
367
終了ページ:
372
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998186 [1558998187]
言語:
英語
請求記号:
M23500/865
資料種別:
国際会議録

類似資料:

1 国際会議録 A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements

S.S. Suvanam, M. Usman, K. Gulbinas, V. Grivickas, A. Hallén

Trans Tech Publications
7 国際会議録 Deep Centers and Fill Factor Losses in the CIGS Devices

Igalson, M., Kubiaczyk, A., Zabierowski, P.

Materials Research Society
2 国際会議録 Carrier Concentration Depth Profile Measurement System on a Large Area by 200 μm Diameter Schottky Diode Capacitance-Voltage Method

Saito, Y.

Electrochemical Society
8 国際会議録 On the Effects of Carrier Tunneling on the Capacitance-Voltage Characteristics of Ultrathia-Oxide MOSFETs

M. Y. C. Shea, J. Jopling, H. Z. Massoud

Electrochemical Society
3 国際会議録 Capacitance-voltage-method carrier concentration depth profiles in liquid-encapsulated-czochralski-technique grown GaAs wafers from near-stoichiometric and …

Saito, yasuyuki, Nishio, Jhoji

MRS - Materials Research Society
9 国際会議録 EFFECT OF C IMPURITIES IN a-Si:H AS MEASURED BY DRIVE-LEVEL CAPACITANCE, PHOTOCURRENT, AND ELECTRON SPIN RESONANCE

Hautala, J., Unold, T., Cohen, J.D.

Materials Research Society
4 国際会議録 200 μm Diameter Schottky Diode Array Process for the Capacitance-Voltage Method Measurement of Carrier Concentration Depth Profiles on a Large Area

Saito, Y.

Electrochemical Society
10 国際会議録 Electrochemical Capacitance-Voltage Profiling of Pseudomorphic High-Electron Mobility Transistors

Leoni, R.E., Zhao, Y., Hwang, J.C.M., Hierl, T.L.

Electrochemical Society
5 国際会議録 Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy

Duhayon, N., Clarysse, T., Alvarez, D., Eyben, P., Fouchier, M., Vandervorst, W.J., Hellemans, L.

Electrochemical Society
11 国際会議録 Analysis of MOS device capacitance-voltage characteristics based on the self-consistent solution of the schrodinger and poisson equations

Raynaud, C., Autran, J. L., Masson, P., Bidaud, M., Poncet, A.

MRS-Materials Research Society
6 国際会議録 Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy

Duhayon, N., Clarysse, T., Alvarez, D., Eyben, P., Fouchier, M., Vandervorst, W., Hellemans, L.

SPIE-The International Society for Optical Engineering
12 国際会議録 Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors

Dabiran, A.M., Osinsky, A., Chow, P.P., Zhang, Z., Madjar, A., Osinsky, S., Hwang, J.C.M., Fitch, R.C., Gillespie, J., …

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12