MULTI-WAVELENGTH ELLIPSOMETRY FOR EFFECTIVE CHARACTERIZATION OF THIN EPITAXIAL Si1-XGeX LAYERS ON SILICON SUBSTRATE

MULTI-WAVELENGTH ELLIPSOMETRY FOR EFFECTIVE CHARACTERIZATION OF THIN EPITAXIAL Si1-XGeX LAYERS ON SILICON SUBSTRATE

著者名:

掲載資料名:

Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

298

発行年:

1993

開始ページ:

151

終了ページ:

156

総ページ数:

6

出版情報:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991941 [1558991948]

言語:

英語

請求記号:

M23500/298

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015782
シリーズID:	PA00000011
会議名:	Symposium on silicon-based optoelectronic materials
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.14

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