CONDUCTION AND VALENCE BAND OFFSETS AT THE HYDROGENATED AMORPHOUS SILICON-CARBON/CRYSTALLINE SILICON INTERFACE VIA CAPACITANCE TECHNIQUES

CONDUCTION AND VALENCE BAND OFFSETS AT THE HYDROGENATED AMORPHOUS SILICON-CARBON/CRYSTALLINE SILICON INTERFACE VIA CAPACITANCE TECHNIQUES

著者名:

掲載資料名:

Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

297

発行年:

1993

開始ページ:

705

終了ページ:

710

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991934 [155899193X]

言語:

英語

請求記号:

M23500/297

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015781
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.13-1993.04.16

類似資料:

1 国際会議録 BAND OFFSETS AND ANOMALOUS DEEP DEFECT DISTRIBUTION AT THE HYDROGENATED AMORPHOUS SILICON-CRYSTALLINE SILICON INTERfACE VIA JUNCTION CAPACITANCE TEHCNIQUES Essick, J. M., Cohen, J. D. Materials Research Society	7 国際会議録 Determining band offset and interface charge density of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode by C-V matching method J. J. Lu, Z. Z. Jiang, J. Chen, Y. L. He, W. Z. Shen Society of Photo-optical Instrumentation Engineers
2 国際会議録 INVESTIGATION OF AMORPHOUS-CRYSTALLINE SILICON INTERFACE VIA CAPACITANCE TECHNIQUES Essick, J.M., Cohen, J.D. Materials Research Society	8 国際会議録 Band Alignment at Amorphous/crystalline Silicon Hetero-interfaces L. Korte, T.F. Schulze, C. Leendertz, M. Schmidt, B. Rech Materials Research Society
3 国際会議録 DEPENDENCE OF THE a-Si:H DEFECT DENSITY OF STATES ON THE MAGNETIC FIELD PROFILE OF AN ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA Pool, F.S., Essick, J.M., Shing, Y.H., Mather, R.T. Materials Research Society	9 国際会議録 Metastable defects and recombination in hydrogenated amorphous silicon Morgado,E., Henriques,R.T. Trans Tech Publications
4 国際会議録 CHARACTERIZATION OF ELECTRON CYCLOTRON RESONANCE PLASMA-DEPOSITED HYDROGENATED AMORPHOUS SILICON AND RELATED ALLOY FILMS Essick, J.M., Pool, F.S., Shing, Y.M., Holboke, M.J. Materials Research Society	10 国際会議録 Determining the Conduction Band and Valence Band Shift of Porous Silicon using Electron Transfer Rehm, J.M., McLendon, G.L., Fauchet, P.M. Electrochemical Society
5 国際会議録 AN INVESTIGATION OF SPIN AND CHARGE STATES ASSOCIATED WITH METASTABLE DEFECTS IN N-TYPE HYDROGENATED AMORPHOUS SILICON Rasmussen, R.J., Cohen, J.D., Essick, J.M. Materials Research Society	11 国際会議録 Hydrogen Structures in Heavily Hydrogenated Crystalline and Amorphous Silicon Jackson, W. B., Franz, A., Chabal, Y., Weldon, M. K., Jin, H-C., Abelson, J. R. MRS - Materials Research Society
6 国際会議録 PERCOLATION BEHAVIOUR IN THE ELECTRICAL CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON NITRIDE FILMS Lopez-Villegas, J.M., Garrido, B., Benrakkad, M.S., Samitier, J., Bertran, E., Canillas, A., Morante, J.R. Materials Research Society	12 国際会議録 CORE AND VALENCE LEVELS IN HYDROGENATED AMORPHOUS SILICON Burnham, N.A., Fisher, R.F., Asher, S.E., Kazmerski, L.L., Lucovsky, G., Parsons, G.N. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12