EFFECTS OF STRUCTURAL DISORDER ON THE ELECTRONIC PROPERTIES OF SILICON: TIGHT-BINDING CALCULATIONS OF GRAIN BOUNDARIES

EFFECTS OF STRUCTURAL DISORDER ON THE ELECTRONIC PROPERTIES OF SILICON: TIGHT-BINDING CALCULATIONS OF GRAIN BOUNDARIES

著者名:

掲載資料名:

Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

297

発行年:

1993

開始ページ:

177

終了ページ:

182

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991934 [155899193X]

言語:

英語

請求記号:

M23500/297

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015781
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.13-1993.04.16

類似資料:

1 国際会議録 ORIGINS OF THE GAP STATES IN POLYCRYSTALLINE SILICON: TIGHT-BINDING CALCULATIONS OF TWIST BOUNDARIES Kohyama, M., Kose, S., Yamamoto, R. Materials Research Society	7 国際会議録 Structural Disorder and Localized Gap States in Silicon Grain Boundaries From a Tight-Binding Model Cleri, F., Keblinski, P., Colombo, L., Phillpot, S. R., Wolf, D. MRS - Materials Research Society
2 国際会議録 Tight-Binding Study of Twist Boundaries in Silicon Kohyama,M., Kose,S., Yamamoto,R. Trans Tech Publications	8 国際会議録 Progress on Tight-Binding Calculations of Silicon Grain Boundaries containing Nickel Impurities Torrent,M., Duparc,O.B.M.Hardouin Trans Tech Publications
3 国際会議録 Tight-Binding Calculation of Grain Boundaries in Diamond Kohyama,M., Ichinose,H., Ishida,Y., Nakanose,M. Trans Tech Publications	9 国際会議録 Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors Kohyama,M., Kose,S., Yamamoto,R. Trans Tech Publications
4 国際会議録 THE ATOMIC AND ELECTRONIC STRUCTURES OF GRAIN BOUNDARIES IN SILICON-CARBIDE AND SILICON Kohyama, M., Kose, S., Kinoshita, M., Yamamoto, R. Materials Research Society	10 国際会議録 THEORETICAL STUDY OF POLAR AND NON-POLAR INTERFACES IN COMPOUND SEMICONDUCTORS: A THERMODYNAMIC ANALYSIS BASED ON ELECTRONIC STRUCTURE CALCULATIONS Kohyama, M., Kose, S., Yamamoto, R. Materials Research Society
5 国際会議録 ENERGIES AND ATOMIC STRUCTURES OF GRAIN BOUNDARIES IN SILICON: COMPARISON BETWEEN TILT AND TWIST BOUNDARIES Kohyama, M., Yamamoto, R., Watanabe, Y. MRS - Materials Research Society	11 国際会議録 Tight-Binding Calculations of Complex Defects in Semiconductors: Comparison With Ab Initio Results Kohyama, M., Arai, N., Takeda, S. MRS - Materials Research Society
6 国際会議録 Theoretical Study of Grain Boundaries in Silicon:Features of Atomic and Electronic Structures Kohyama,M. Trans Tech Publications	12 国際会議録 Ab Initio Calculations for Grain Boundaries in Covalent Ceramics Kohyama, Masanori MRS - Materials Research Society

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