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EFFECTS OF ELECTRODE SPACING AND HYDROGEN DILUTION ON a-SiC:H AND a-Si:H LAYERS

著者名:
Daey Ouwens, J.
Schropp, R.E.I.
van der Werf, C.H.M.
von der Linden, M.B.
Maree, C.H.M.
van der Weg, W.F.
Rava, P.
Demichelis, F.
Pirri, C.F.
Tresso, E.
さらに 5 件
掲載資料名:
Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
297
発行年:
1993
開始ページ:
61
終了ページ:
66
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991934 [155899193X]
言語:
英語
請求記号:
M23500/297
資料種別:
国際会議録

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