QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
- 著者名:
Lucovsky, G. Ma, Y. He, S.S. Yasuda, T. Stephens, D.J. Habermehl, S. - 掲載資料名:
- Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 284
- 発行年:
- 1993
- 開始ページ:
- 33
- 終了ページ:
- 38
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991798 [1558991794]
- 言語:
- 英語
- 請求記号:
- M23500/284
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
8
国際会議録
Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Materials Research Society |
MRS - Materials Research Society |
9
国際会議録
Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
American Institute of Chemical Engineers |
Materials Research Society |
Materials Research Society |
Materials Research Society |