SILICON NITRIDE DEPOSITED AT VERY LOW SILANE PRESSURES USING ELECTRON CYCLOTRON RESONANCE PLASMAS

SILICON NITRIDE DEPOSITED AT VERY LOW SILANE PRESSURES USING ELECTRON CYCLOTRON RESONANCE PLASMAS

著者名:

掲載資料名:

Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

284

発行年:

1993

開始ページ:

15

終了ページ:

20

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991798 [1558991794]

言語:

英語

請求記号:

M23500/284

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015768
シリーズID:	PA00000011
会議名:	Symposium on amorphous insulating thin films
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.12.01-1992.12.04

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