ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS

ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS

著者名:

掲載資料名:

Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

283

発行年:

1993

開始ページ:

567

終了ページ:

572

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991781 [1558991786]

言語:

英語

請求記号:

M23500/283

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015767
シリーズID:	PA00000011
会議名:	Symposium on microcrystalline semiconductors
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

類似資料:

1 国際会議録 PHOTOLUMINESCENCE IN B-DOPED μc-Si:H Gu, S.Q., Viner, J.M., Taylor, P.C., Williams, M.J., Turner, W.A., Lucovsky, G. Materials Research Society	7 国際会議録 DEPOSITION OF MICROCRYSTALLINE Si,Ge (ｦﾌc-Si,Ge) ALLOYS BY REACTIVE MAGNETRON SPUTTERING Cho, S. M., Wolfe, D., He, S. S., Christensen, K., Maher, D. M., Lucovsky, G. MRS - Materials Research Society
2 国際会議録 A SPECTROSCOPIC INVESTIGATION OF THE AMORPHOUS TO MICROCRYSTALLINE TRANSITION IN SILICON PREPARED BY REACTIVE MAGNETRON SPUTTERING Turner, W.A., Lucovsky, G. Materials Research Society	8 国際会議録 DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD) Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G. Materials Research Society
3 国際会議録 ELECTRON MICROSCOPY STUDIES OF UNDOPED AND PHOSPHORUS DOPED Si:H AND Si,C:H FILMS Chen, Y.L., Bentley, J., Wang, C., Lucovsky, G., Maher, D.M. Materials Research Society	9 国際会議録 Substrate Surface Dependence of the Microstructure of ｦﾌc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS) Cho, S. M., Christensen, K., Wolfe, D., Ying, H., Lee, D. R., Lucovsky, G., Maher, D. M. MRS - Materials Research Society
4 国際会議録 *TRANSPORT AND MICROSTRUCTURE OF MICROCRYSTALLINE SILICON ALLOYS Lucovsky, G., Wang, C., Williams, M.J., Chen, Y.L., Maher, D.M. Materials Research Society	10 国際会議録 A STUDY OF EXTENDED DEFECTS IN SILICON CRYSTALS AFTER EXPOSURE TO A HYDROGEN PLASMA Chen, Y.L., Maher, D.M. Materials Research Society
5 国際会議録 ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD Ma, Y., Yasuda, T., Chen, Y.L., Lucovsky, G., Maher, D.M. Materials Research Society	11 国際会議録 SMALL-ANGLE X-RAY SCATTERING FROM a-Si:H AND a-SiC:H ALLOYS PREPARED BY REACTIVE DC MAGNETRON SPUTTERING Chen, Y., Jones, S.J., Williamson, D.L., Yang, S., Maley, N., Abelson, J.R. Materials Research Society
6 国際会議録 Electric and Optical Properties of ｦﾌc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS) Cho, S. M., Wolfe, D., Christensen, K., Lucovsky, G., Maher, D. M. MRS - Materials Research Society	12 国際会議録 DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD Williams, M.J., Wang, C., Lucovsky, G. Materials Research Society

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