STUDY OF THE TRANSVERSAL ELECTRON MOBILITY IN HETEROJUNCTION BIPOLAR TRANSISTORS WITH STRAINED Si1-XGeX -BASE

STUDY OF THE TRANSVERSAL ELECTRON MOBILITY IN HETEROJUNCTION BIPOLAR TRANSISTORS WITH STRAINED Si1-XGeX -BASE

著者名:

掲載資料名:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

281

発行年:

1993

開始ページ:

409

終了ページ:

414

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

言語:

英語

請求記号:

M23500/281

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015765
シリーズID:	PA00000011
会議名:	Symposium on semiconductor heterostructures for photonic and electronic applications
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

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