GRADED BUFFER LAYERS FOR MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH In CONTENT InGaAs ON GaAs FOR OPTOELECTRONICS

GRADED BUFFER LAYERS FOR MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH In CONTENT InGaAs ON GaAs FOR OPTOELECTRONICS

著者名:

Lord, S.M.

掲載資料名:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

281

発行年:

1993

開始ページ:

221

終了ページ:

226

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

言語:

英語

請求記号:

M23500/281

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015765
シリーズID:	PA00000011
会議名:	Symposium on semiconductor heterostructures for photonic and electronic applications
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

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