ON THE GROWTH- AND ANNEALING-TEMPERATURE DEPENDENCE OF THE ELECTRICAL PROPERTIES OF Ga0.51In0.49P/GaAs HETEROSTRUCTURES GROWN BY MOMBE
- 著者名:
- 掲載資料名:
- Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 281
- 発行年:
- 1993
- 開始ページ:
- 55
- 終了ページ:
- 60
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991767 [155899176X]
- 言語:
- 英語
- 請求記号:
- M23500/281
- 資料種別:
- 国際会議録
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