AFM STUDY OF NUCLEATION AND VOID FORMATION IN SiC CARBONIZATION OF Si

AFM STUDY OF NUCLEATION AND VOID FORMATION IN SiC CARBONIZATION OF Si

著者名:

掲載資料名:

Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

280

発行年:

1993

開始ページ:

739

終了ページ:

744

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991750 [1558991751]

言語:

英語

請求記号:

M23500/280

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015764
シリーズID:	PA00000011
会議名:	Symposium on evolution of surface and thin film microstructure
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

類似資料:

1 国際会議録 EFFECT OF CARBONIZATION GAS PRECURSOR ON THE HETEROEPITAXIAL GROWTH OF SiC-ON-Si BY RTCVD Steckl, A.J., Li, J.P. Materials Research Society	7 国際会議録 Heteroepitaxial Growth of SiC on Si by Gas Seurce MBE with Silacyclobutane Chen,J., Steckl,A.J., Loboda,M.J. Trans Tech Publications
2 国際会議録 CHARACTERIZATION OF PHOTOLUMINESCENCE FROM ANODICALLY ETCHED SiC/Si HETEROSTRUCTURES Steckl, A.J., Su, J.N., Xu, J., Li, J.P., Yuan, C., Yih, P.H., Mogul, H.C. Materials Research Society	8 国際会議録 RAMAN SCATTERING CHARACTERIZATION OF ULTRATHIN FILMS OF β-SiC Choo, Ahn Goo, Tlali, Spirit, Jackson, Howard E., Li, J. P., Steckl, Andrew J. MRS - Materials Research Society
3 国際会議録 SiC SOI structures by direct carbonization conversion and direct growth from silacyclobutame Steckl, A.J., Yuan, C., Tong, Q.Y., Goesele, U., Loboda, M.J. Electrochemical Society	9 国際会議録 Optical Properties of GaN Films Grown Qrt SiC/Si Devrajan,J., Steckl,A.J., Tran,C.A., Stall,R.A. Trans Tech Publications
4 国際会議録 High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization Saxena,V., Steckl,A.J. Trans Tech Publications	10 国際会議録 The Role of Impurities in the Formation of Voids in Silicon Simpson, P.J., Knights, A.P. Trans Tech Publications
5 国際会議録 Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC iu NF5 Saxena,V., Steckl,A.J. Trans Tech Publications	11 国際会議録 Carbonization of Porous Silicon for 3C-SiC Growth A.V. Vasin, Y. Ishikawa, N. Shibata, J. Salonen, V.P. Lehto Trans Tech Publications
6 国際会議録 ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF SiC IN CHF3 AND OXYGEN PLASMA Pan, W-S., Steckl, A.J. Materials Research Society	12 国際会議録 Nucleation and Growth of Voids in Silicon Plekhanov, P. S., Gosele, U. M., Tan, T. Y. MRS - Materials Research Society

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