EVOLUTION OF EPITAXIAL SiXGe1-X ALLOYS ON Si (100) DURING THERMAL ANNEALING a-Ge/Au BILAYERS DEPOSITED ON Si SUBSTRATE

EVOLUTION OF EPITAXIAL SiXGe1-X ALLOYS ON Si (100) DURING THERMAL ANNEALING a-Ge/Au BILAYERS DEPOSITED ON Si SUBSTRATE

著者名:

掲載資料名:

Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

280

発行年:

1993

開始ページ:

613

終了ページ:

618

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991750 [1558991751]

言語:

英語

請求記号:

M23500/280

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015764
シリーズID:	PA00000011
会議名:	Symposium on evolution of surface and thin film microstructure
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

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