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Ge SEGREGATION AND SURFACE ROUGHENING DURING Si GROWTH ON Ge(001)2x1 BY GAS-SOURCE MOLECULAR BEAM EPITAXY FROM Si2H6

著者名:
掲載資料名:
Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
280
発行年:
1993
開始ページ:
281
終了ページ:
284
総ページ数:
4
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991750 [1558991751]
言語:
英語
請求記号:
M23500/280
資料種別:
国際会議録

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