DOSE RATE DEPENDENCE OF THE ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON

DOSE RATE DEPENDENCE OF THE ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON

著者名:

掲載資料名:

Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

279

発行年:

1993

開始ページ:

273

終了ページ:

278

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991743 [1558991743]

言語:

英語

請求記号:

M23500/279

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015763
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

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2 国際会議録 Ion beam induced epitaxial crystallization of single crystalline 6H-SiC Heera, V., Kogler, R., Skorupa, W., Glaser, E. MRS - Materials Research Society	8 国際会議録 Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization Romano-Rodriguez, A., Perez-Rodriguez, A., Serre, C., Morante, J. R., Esteve, J., Acero, M. C., Kogler, R., Skorupa, W., … Trans Tech Publications
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