Blank Cover Image

ROLE OF OXYGEN PRECIPITATION PROCESSES IN DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

著者名:
掲載資料名:
Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
279
発行年:
1993
開始ページ:
153
終了ページ:
158
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991743 [1558991743]
言語:
英語
請求記号:
M23500/279
資料種別:
国際会議録

類似資料:

1 国際会議録 DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Lee, J. D., Park, J. C., Venables, D., Krause, S. J., Roitman, P.

MRS - Materials Research Society
7 国際会議録 OXYGEN BUBBLE FORMATION AND TRANSFORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION AND ANNEALING OF SILICON

Krause, S.J., Seraphin, S., Chen, B.L., Cordts, B., Roitman, P.

Materials Research Society
2 国際会議録 Effect of implantation conditions on defect microstructure in annealed SIMOX

Lee, J.D., Park, J.C., Krause, S.J., Venables, D., Roitman, P.

Electrochemical Society
8 国際会議録 STRAIN RELIEF AND DEFECT FORMATION IN HIGH DOSE OXYGEN IMPLANTED SILICON

Venables, D., Jones, K. S., Namavar, F., Manke, J. M.

Materials Research Society
3 国際会議録 EFFECT OF INTERMEDIATE THERMAL PROCESSING ON MICROSTRUCTURAL CHANGES OF OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Lee, J. D., Park, J. C., Krause, S. J., Roitman, P., El-Ghor, M. K.

Materials Research Society
9 国際会議録 TWINNING STRUCTURE OF (113) DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Visitserngtrakul, S., Barry, J., Krause, S.

Materials Research Society
4 国際会議録 HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Visitserngtrakul, S., Jung, C. O., Cordts, B. F., Roitman, P., Krause, S. J.

Materials Research Society
10 国際会議録 Defect formation mechanisms in low dose SIMOS material

Bagchi, S, Lee, J D, Krause, S J, Roiman, P

Electrochemical Society
5 国際会議録 *PRECIPITATE AND DEFECT FORMATION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Krause, S. J., Jung, C. O., Ravi, T. S., Wilson, S. R., Burke, D. E.

Materials Research Society
11 国際会議録 FORMATION OF SILICON ON INSULATOR (SOI) WITH SEPARATION BY PLASMA IMPLANTATION OF OXYGEN (SPIMOX)

Liu, J. B., Iyer, S. S. K., Min, J., Chu, P., Gronsky, R., Hu, C., Cheung, N. W.

MRS - Materials Research Society
6 国際会議録 Effect of nitrogen ambients during high temperature SIMOX annealing

Roitman, P., Mayo, S., Simons, D., Krause, S.J., Venables, D., Park, J.C., Lee, J.D., Lenahan, P., Conley, J.

Electrochemical Society
12 国際会議録 EFFECT OF IMPLANTATION CONDITIONS ON THE MIROSTRUCTURE OF HIGH-CURRENT, OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Visitserngtrakul, S., Cordts, B.F., Krause, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12