OXYGEN-DOPED-SILICON/SILICON HETEROINTERFACES BY ION IMPLANTATION

OXYGEN-DOPED-SILICON/SILICON HETEROINTERFACES BY ION IMPLANTATION

著者名:

掲載資料名:

Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

268

発行年:

1992

開始ページ:

369

終了ページ:

376

総ページ数:

8

出版情報:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991637 [1558991638]

言語:

英語

請求記号:

M23500/268

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015752
シリーズID:	PA00000011
会議名:	Symposium on materials modification by energetic atoms and ions
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.28-1992.04.30

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2 国際会議録 HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON Srikanth, K., Chu, M., Ashok, S., Nguyen, N., Vedam, K. Materials Research Society	8 国際会議録 ION IMPLANTATION DOPING OF SEMI-INSULATING POLYCRYSTALLINE SILICON Lombardo, Salvatore, Campisano, S. U. MRS - Materials Research Society
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