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SUPPRESSION OF ISLAND FORMATION DURING INITIAL STAGES OF Ge/Si(100) GROWTH BY ION-ASSISTED MOLECULAR BEAM EPITAXY

著者名:
掲載資料名:
Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
268
発行年:
1992
開始ページ:
127
終了ページ:
132
総ページ数:
6
出版情報:
Pittsburgh, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558991637 [1558991638]
言語:
英語
請求記号:
M23500/268
資料種別:
国際会議録

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