Blank Cover Image

GROWTH AND CHARACTERIZATION OF GeXSi1-X/Si MULTIPLE QUANTUM WELL STRUCTURES

著者名:
掲載資料名:
Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
263
発行年:
1992
開始ページ:
365
終了ページ:
370
総ページ数:
6
出版情報:
Pittsburgh, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558991583 [1558991581]
言語:
英語
請求記号:
M23500/263
資料種別:
国際会議録

類似資料:

1 国際会議録 CHARACTERIZATION OF DOPED GeXSi1-X MULTIPLE QUANTUM WELL STRUCTURES FOR FAR-IR DETECTORS

Greve, D.W., Misra, R., Strong, R., Schlesinger, T.E.

Materials Research Society
7 国際会議録 GROWTH OF EPITAXIAL LAYERS OF GeXSi1-X BY UHV/CVD

Racanelli, Marco, Greve, David W.

Materials Research Society
2 国際会議録 GexSi1-x Heterojunction Internal Photoemission Structures by Ultra High Vacuum Chemical Vapor Deposition

Strong, R., Greve, D. W., Schlesinger, T. E., Weeks, M. M., Pellegrini, P. W.

MRS - Materials Research Society
8 国際会議録 InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for tong-wavelength infrared detection

Zhang,D.H., Zhang,W.M., Zhang,P.H., Osotchan,T., Yoon,S.F., Shi,X., Liu,R., Wee,T.S.

SPIE - The International Society for Optical Engineering
3 国際会議録 CHARACTERIZATION AND GROWTH OF ORGANIC MULTIPLE QUANTUM WELL STRUCTURE

So, F. F., Forrest, S. R., Shi, Y. Q., Steier, W. H.

Materials Research Society
9 国際会議録 GROWTH AND HIGH RESOLUTION TEM CHARACTERIZATION OF GexSi1-x/Si HETERO-STRUCTURES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

Qian, R., Chung, I., Kinosky, D., Hsu, T., Irby, J., Mahajan, A., Thomas, S., Banerjee, S., Tasch, A., Rabenberg, L., …

Materials Research Society
4 国際会議録 Improved Process Window Using Low-Carbon GexSi1-x-yCy Epitaxial Layers

Mocuta, A., Greve, D. W., Strong, R. M.

MRS - Materials Research Society
10 国際会議録 Growth and Characterization of 1.55 p.m InGaAs/InGaAsP Multiple Quantum Well Fabry- Perot and DFB Lasers Grown by Low Pressure MOCVD

McCrary, V.R., Ketelsen, L.J., Napholtz, S. G., Bruno, D., Slusky, S. E., Byrne, E.K., Chu, S.N.G., Brelvi, M., Thomas, …

Electrochemical Society
5 国際会議録 COMPARISON OF MESA-ETCHED AND ION-IMPLANTED GeXSi1-X HETEROJUNCTION BIPOLAR TRANSISTORS

Greve, D. W., Racanelli, M.

Materials Research Society
11 国際会議録 Approaches Toward Chemically Prepared Multiple Quantum Well Structures

Cronin, S. B., Koga, T., Sun, X., Ding, Z., Huang, S-C., Kaner, R. B., Dresselhaus, M. S.

MRS - Materials Research Society
6 国際会議録 THE CHARACTERISTICS OF THE LATERAL THICKNESS MODULATION IN STRAINED LAYER GaxIn1-xAs MULTIPLE QUANTUM WELL STRUCTURES GROWN BY MOVPE

Zhou, X., Charsley, P., Smith, A. D., Briggs, A. T. R.

MRS - Materials Research Society
12 国際会議録 Characterization of InGaN/AlGaN multiple-quantum-well laser diodes

Kneissl,M., Bour,D.P., Romano,L.T., Hofstetter,D., McCluskey,M.D., Dunnrowicz,C.J., Teepe,M., Wood,R.M., Johnson,N.M.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12