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IMPROVEMENT OF GATE OXIDE INTEGRITY CHARACTERISTICS IN CZ-GROWN Si CRYSTALS BY H2 ANNEALING

著者名:
Adachi, N.
Nishikawa, H.
Komatsu, Y.
Hourai, H.
Sano, M
Shigematsu, T.
さらに 1 件
掲載資料名:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
262
発行年:
1992
開始ページ:
815
終了ページ:
822
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
言語:
英語
請求記号:
M23500/262
資料種別:
国際会議録

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