CHARACTERISTICS OF OXYGEN PRECIPITATION IN SILICON WAFERS PREANNEALED AT 723K

CHARACTERISTICS OF OXYGEN PRECIPITATION IN SILICON WAFERS PREANNEALED AT 723K

著者名:

掲載資料名:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

262

発行年:

1992

開始ページ:

683

終了ページ:

688

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

言語:

英語

請求記号:

M23500/262

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015746
シリーズID:	PA00000011
会議名:	Symposium on defect engineering in semiconductor growth, processing and device technology
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.26-1992.05.01

類似資料:

1 国際会議録 FORMATION OF INTERSTITIAL OXYGEN STRIATIONS IN CZ GROWN SILICON SINGLE CRYSTALS Iino, E., Takano, K., Fusegawa, I., Yamagishi, H. Electrochemical Society	7 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettenng and Mechanical Strength in Epitaxial and Polished Silicon Wafers * Sueoka, K., Akatsuka, M., Onno, T., Asayama, E., Koike, Y., Adachi, N., Sadamitsu, S., Katahama, H. Electrochemical Society
2 国際会議録 OXYGEN PRECIPITATION NONUNIFORMITY FOR THERMAL HISTORY AROUND 723K DURING CZ CRYSTAL GROWTH Fusegawa, I., Yamagishi, H. Materials Research Society	8 国際会議録 Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers Sucoka, K., Yonemura, M., Akatsuka, M., Katahama, H., Ono, T., Asayama, E. Electrochemical Society
3 国際会議録 THE EFFECT OF D-DEFECT IN SILICON SINGLE CRYSTAL ON OXYGEN PRECIPITATION Fusegawa, I., Fujimaki, N., Yamagishi, H. Materials Research Society	9 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers Sueoka,K., Akatsuka,M., Onno,T., Asayama,E., Koike,Y., Adachi,N., Sadamitsu,S., Katahama,H. Electrochemical Society, SPIE-The International Society for Optical Engineering
4 国際会議録 Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method Iino,E., Fusegawa,I., Yanragishi,H. Trans Tech Publications	10 国際会議録 INVITED: RESEARCH AND DEVELOPMENT OF SUPER SILICON WAFERS Takada, K., Yamagishi, H., Minami, H., Imai, M. Electrochemical Society
5 国際会議録 EVALUATION OF FPDS AND COPS IN SILICON SINGLE - CRYSTALS Yamagishi, H., Fusegawa, I., Takano, K., Iino, E., Fujimaki, N., Ohta, T., Sakurada, M. Electrochemical Society	11 国際会議録 Relationship between Grown-in Defects and Thermal History during CZ Si Crystal Growth Takano,K., Kitagawa,K., Iino,E., Kimura,M., Yamagishi,H. Trans Tech Publications
6 国際会議録 Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers Ono, T., Rozgonyi, G.A., Au, C., Messina, T., Goodall, R.K., Huff, H.R. Electrochemical Society	12 国際会議録 Precipitation of oxygen and intrinsic gettering in silicon Tice, W.K., Tan, T.Y. North Holland

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