CONTROL OF PROCESS-INDUCED DEFECTS IN THE FORMATION OF SINGLE AND MULTIPLE LAYER DIELECTRIC STRUCTURES FOR Si SEMICONDUCTOR DEVICES
- 著者名:
He, S. S. Stephens, D. J. Ma. Y. Yasuda, T. Habermehl, S. Lucovsky, G. - 掲載資料名:
- Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 262
- 発行年:
- 1992
- 開始ページ:
- 653
- 終了ページ:
- 658
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991576 [1558991573]
- 言語:
- 英語
- 請求記号:
- M23500/262
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society | |
Materials Research Society | |
3
国際会議録
Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Materials Research Society |
Materials Research Society |
4
国際会議録
Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society | |
Materials Research Society |
MRS - Materials Research Society |