HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON

HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON

著者名:

掲載資料名:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

262

発行年:

1992

開始ページ:

419

終了ページ:

424

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

言語:

英語

請求記号:

M23500/262

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015746
シリーズID:	PA00000011
会議名:	Symposium on defect engineering in semiconductor growth, processing and device technology
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.26-1992.05.01

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