A STUDY OF DEFECTS IN CZOCHRALSKI-GROWN SILICON BY POSITION ANNIHILATION SPECTROSCOPY
- 著者名:
Sharman, S. C Hozhabri, N. Hyer, R. C. Hossain, T. Kim S. Meyer, F. O. Mas III, M. F. Stephens, A. E. - 掲載資料名:
- Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 262
- 発行年:
- 1992
- 開始ページ:
- 45
- 終了ページ:
- 50
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991576 [1558991573]
- 言語:
- 英語
- 請求記号:
- M23500/262
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
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4
国際会議録
Effects of Growth Parameters on the Defects Formation in the Czochralski Grown Silicon Crystal
Electrochemical Society |
Electrochemical Society, SPIE-The International Society for Optical Engineering |
Materials Research Society |
Electrochemical Society |
Trans Tech Publications |
Trans Tech Publications |