DEPOSIT OF TUNGSTEN ON SILICON DIOXIDE BY GeH4 REDUCTION OF WF6

DEPOSIT OF TUNGSTEN ON SILICON DIOXIDE BY GeH4 REDUCTION OF WF6

著者名:

掲載資料名:

Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

260

発行年:

1992

開始ページ:

93

終了ページ:

98

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991552 [1558991557]

言語:

英語

請求記号:

M23500/260

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015744
シリーズID:	PA00000011
会議名:	Symposium on advanced metallization and processing for semiconductor devices and circuits
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.05.01

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