*SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES

*SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES

著者名:

Pearton, S. J.

掲載資料名:

Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

260

発行年:

1992

開始ページ:

19

終了ページ:

30

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991552 [1558991557]

言語:

英語

請求記号:

M23500/260

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015744
シリーズID:	PA00000011
会議名:	Symposium on advanced metallization and processing for semiconductor devices and circuits
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.05.01

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2 国際会議録 Small diameter dry etched via holes in GaAs Pearton, S. J., Ren, F., Katz, A., Tseng, B., Lothian, J. R., Fullowan, T. R. MRS - Materials Research Society	8 国際会議録 Reliability of implant-isolation regions in highly-doped GaAs-based structures Ren, F., Pearton, S. J., Lothian, J. R., Fullowan, T. R., Abernathy, C. R., Chu, S. N. G. MRS - Materials Research Society
3 国際会議録 HIGH DENSITY MAGNETICALLY CONFINED DRY ETCHING OF METALLIZATION AND DIELECTRICS IN GaAs DEVICE TECHNOLOGY Pearton, S. J., Abernathy, C. R., Ren, F., Lothian, J. R., Kopf, R. P., Katz, A. MRS - Materials Research Society	9 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R. Materials Research Society
4 国際会議録 COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE Wisk, P., Abernathy, C. R., Pearton, S. J., Ren, F., Fullowan, T., Lothian, J. Materials Research Society	10 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society
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