SURFACE ELECTRONIC STATES OF LOW TEMPERATURE H-PLASMA CLEANED Si(100) AND Ge(100) SURFACES

SURFACE ELECTRONIC STATES OF LOW TEMPERATURE H-PLASMA CLEANED Si(100) AND Ge(100) SURFACES

著者名:

掲載資料名:

Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

259

発行年:

1992

開始ページ:

237

終了ページ:

242

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991545 [1558991549]

言語:

英語

請求記号:

M23500/259

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015743
シリーズID:	PA00000011
会議名:	Symposium on chemical surface preparation, passivation, and cleaning for semiconductor growth and processing
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.04.29

類似資料:

1 国際会議録 LOW TEMPERATURE HYDROGEN PLASMA CLEANING PROCESSES OF Si(100), Ge(100), AND SixGe1-x(100) Schneider, T.P., Aldrich, D.A., Cho, J., Nemanich, R.J. Materials Research Society	7 国際会議録 HYDROGEN PLASMA CLEANING PRIOR TO LOW TEMPERATURE GATE OXIDE DEPOSITION IN CLUSTER FABRICATED MOSFETs Montgomery, J.S., Barnak, J.P., Bayoumi, A., Hauser, J.R., Nemanich, R.J. Electrochemical Society
2 国際会議録 PLASMA-SURFACE INTERACTION LIMITS FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T.P., Bernhard, B.L., Chen, Y.L., Nemanich, R.J. Materials Research Society	8 国際会議録 A STUDY OF SURFACE AND SUBSURFACE PROPERTIES OF Si(100) AFTER HYDROGEN ION-BEAM EXPOSURE Liu, H. X., Schneider, T. P., Montgomery, J., Chen, Y. L., Buczkowski, A., Shimura, F., Nemanich, R. J., Maher, D. M., … MRS - Materials Research Society
3 国際会議録 PROCESS AND SURFACE CHARACTERIZATION OF HYDROGEN PLASMA CLEANING OF Si(100) Schneider, T.P., Cho, J., Vander Weide, J., Wells, S.E., Lucovsky, G, Nemanich, R.J., Mantini, M.J., Rudder, R.A., … Materials Research Society	9 国際会議録 Mechanism of Surface Roughness in Hydrogen Plasma Cleaned <100> Silicon at Low Temperatures Hwang, K-H., Yoon, E., Whang, K-W., Lee, J.Y. Electrochemical Society
4 国際会議録 REDUCTION OF SURFACE ROUGHENING AND SUBSURFACE DEFECTS IN H-PLASMA CLEANING OF Si (100) Schneider, T.P., Montgomery, J.S., Ying, H., Barnak, J.P., Chen, Y.L., Maher, D.M., Nemanich, R.J. Electrochemical Society	10 国際会議録 LOW TEMPERATURE IN SITU CLEANING OF Si(100) SURFACES AND TRANSMISSION ELECTRON MICROSCOPY OF SUBSEQUENT GROWTH OF EPITAXIAL GERMANIUM Rudder, R.A., Hattangady, S.V., Posthill, J.B., Markunas, R.J. Materials Research Society
5 国際会議録 PLASMA SURFACE INTERACTIONS AND SURFACE PRORERTIES FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T. P., Cho, J., Chen, Y. L., Maher, D. M., Nemanich, R. J. MRS - Materials Research Society	11 国際会議録 Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation Montgomery, J. S., Barnak, J. P., Silvestre, C., Hauser, J. R., Nemanich, R. J. MRS - Materials Research Society
6 国際会議録 Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF … Yasuda, T., Ma, Y., Habermehl, S., Kim, S.S., Lucovsky, G., Schneider, T.P., Cho, J., Nemanich R.J. Materials Research Society	12 国際会議録 Removal of Fluorine from a Si(100) Surface by a Remote rf hydrogen Plasma Barnak, J. P., King, S., Montgomery, J., Ku, Ja-Hum, Nemanich, R. J. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12