DEPENDENCE OF THE a-Si:H DEFECT DENSITY OF STATES ON THE MAGNETIC FIELD PROFILE OF AN ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA

DEPENDENCE OF THE a-Si:H DEFECT DENSITY OF STATES ON THE MAGNETIC FIELD PROFILE OF AN ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA

著者名:

掲載資料名:

Amorphous silicon technology, 1992

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

258

発行年:

1992

開始ページ:

173

終了ページ:

178

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991538 [1558991530]

言語:

英語

請求記号:

M23500/258

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015742
シリーズID:	PA00000011
会議名:	Amorphous Silicon Technology : Symposium
回次:	1992
会議開催地:	San Francisco, CA, USA
会議開催年:	1992.04.27-1992.05.01

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