EFFECT OF CARBONIZATION GAS PRECURSOR ON THE HETEROEPITAXIAL GROWTH OF SiC-ON-Si BY RTCVD

EFFECT OF CARBONIZATION GAS PRECURSOR ON THE HETEROEPITAXIAL GROWTH OF SiC-ON-Si BY RTCVD

著者名:

掲載資料名:

Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

242

発行年:

1992

開始ページ:

537

終了ページ:

542

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991361 [1558991360]

言語:

英語

請求記号:

M23500/242

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015726
シリーズID:	PA00000011
会議名:	Symposium on wide band gap semiconductors
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.06

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