Blank Cover Image

CHARACTERISTIC OF ZnSe LAYERS GROWN ON Zn-STABILIZED AND Se-STABILIZED GaAs SUBSTRATES

著者名:
掲載資料名:
Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
242
発行年:
1992
開始ページ:
261
終了ページ:
272
総ページ数:
12
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991361 [1558991360]
言語:
英語
請求記号:
M23500/242
資料種別:
国際会議録

類似資料:

1 国際会議録 INFRA-RED PHOTODIODES IN Hg1-xCdxTe GROWN BY OMVPE

Parat, K.K., Tashar, N.R., Ehsani, H., Bhat, I.B., Ghandhi, S.K.

Materials Research Society
7 国際会議録 Electrical Characteristics of In Situ Grown Lateral P+N GaN Junction Diodes on Sapphire Substrates

Fedison,J.B., Chow,T.P., Lu,H., Bhat,I.B.

Trans Tech Publications
2 国際会議録 GROWTH AND CHARACTERIZATION OF Hgl-xCdxTe ON CdTe SUBSTRATES, PREPARED BY ORGANOMETALIC EPITAXY

Bhat, I.B., Ghandhi, S.K.

Materials Research Society
8 国際会議録 THE EFFECT OF SURFACE LAYERS IN EPITAXIAL n-TYUPE Hg1-xCdxTe

Parat, K.K., Taskar, N.R., Bhat, I.B., Ghandi, S.K.

Materials Research Society
3 国際会議録 CHARACTERISTICS OF SULFUR IN OMVPE GROWN INDIUM PHOSPHIDE

Tyagi, S.D., Ehsani, H., Ghandhi, S.K.

Materials Research Society
9 国際会議録 ASPECTS OF “HIGH MINORITY-CARRIER LIFETIME” GaAs ON Si USING A NOVEL SiGe/Ge BUFFER

Venkatasubramanian, R., Posthill, J. B., Timmons, M. L., Ehsani, H., Ghandhi, S. K., Keyes, B. M., Ahrenkiel, R. K.

Materials Research Society
4 国際会議録 MODESTRUCTIVE CHARACTARIZATION OF ZnSe/GaAs HETEROSTRUCTURE USING TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY

Han, K. J, Abbate, A., Bhat, I. B., Akram,, S., Das, P.

Materials Research Society
10 国際会議録 ORDERED STRUCTURES OF Zn1-XFexSe EPILAYERS GROWN ON InP AND GaAs SUBSTRATES

Park, K., Wei, H. -Y., Salamanca-Riba, L., Jonker, B. T.

MRS - Materials Research Society
5 国際会議録 ORGANOMETALLIC EPITAXY OF EXTRINSIC n-TYPE MgCdTe USING TRIMETHYLINDIUN

Taskar, N,R., Parat, K.K., Bhat, I.B., Ghandhi, S.K.

Materials Research Society
11 国際会議録 Photoluminescence of Zn Doped and Si Doped GaAs Epitaxial Layers Grown by MOCVD

Hudait,M.K., Modak,P., Hardikar,S., Rao,K.S.R.K., Krupanidhi,S.B.

Narosa Publishing House
6 国際会議録 ORDERED STRUCTURES OF Zn1-xFexSe EPILAYERS GROWN ON GaAs SUBSTRATES WITH ZnSe BUFFER LAYERS

Wei, H. -Y., Beesabathina, D. Prasad, Salamanca-Riba, L., Jonker, B. T.

MRS - Materials Research Society
12 国際会議録 Electrical and Optical Properties of InSb(1-x) BiX Films Grown on GaAs(100) Substrates Using Liquid Phase Epitaxy

Dixit, V.K., Keerthi, K.S., Bhat, H.L.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12