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STRUCTURAL AND DEFECT STUDY OF LOW TEMPERATURE InP GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

著者名:
掲載資料名:
Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
241
発行年:
1992
開始ページ:
277
終了ページ:
282
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991354 [1558991352]
言語:
英語
請求記号:
M23500/241
資料種別:
国際会議録

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