MATERIALS AND DEVICE CHARACTERISTICS OF MBE MICROWAVE POWER FETs WITH BUFFER LAYERS GROWN AT LOW TEMPERATURE (300°C)

MATERIALS AND DEVICE CHARACTERISTICS OF MBE MICROWAVE POWER FETs WITH BUFFER LAYERS GROWN AT LOW TEMPERATURE (300°C)

著者名:

Ballingall, J.M.

掲載資料名:

Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

241

発行年:

1992

開始ページ:

171

終了ページ:

180

総ページ数:

10

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991354 [1558991352]

言語:

英語

請求記号:

M23500/241

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015725
シリーズID:	PA00000011
会議名:	Symposium on low temperature (LT) gaas and related materials
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.04-1991.12.06

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