AN INVESTIGATION ON THE LATTICE SITE LOCATION OF THE EXCESS ARSENIC ATOMS IN GaAs LAYERS GROWN BY LOW TEMPERATURE MOLECULAR BEAM EPITAXY

AN INVESTIGATION ON THE LATTICE SITE LOCATION OF THE EXCESS ARSENIC ATOMS IN GaAs LAYERS GROWN BY LOW TEMPERATURE MOLECULAR BEAM EPITAXY

著者名:

掲載資料名:

Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

241

発行年:

1992

開始ページ:

145

終了ページ:

150

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991354 [1558991352]

言語:

英語

請求記号:

M23500/241

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015725
シリーズID:	PA00000011
会議名:	Symposium on low temperature (LT) gaas and related materials
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.04-1991.12.06

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