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INCORPORATION OF EXCESS ARSENIC GaAs AND A1GaAs EPILAYERS GROWNT AT ALOW SUBSTRATE TEMPERATURES BY MOLECULAR BEAM EPITAXY

著者名:
Melloch, M.R.
Otsuka, N.
Mahalingam, K.
Warren, A.C.
Woodall, J.M.
Kirchner, P.D.
さらに 1 件
掲載資料名:
Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
241
発行年:
1992
開始ページ:
113
終了ページ:
124
総ページ数:
12
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991354 [1558991352]
言語:
英語
請求記号:
M23500/241
資料種別:
国際会議録

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