LOW DAMAGE MAGNETRON REACTIVE ION ETCHING OF GaAs

LOW DAMAGE MAGNETRON REACTIVE ION ETCHING OF GaAs

著者名:

McLane, G.

掲載資料名:

Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

240

発行年:

1992

開始ページ:

323

終了ページ:

328

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991347 [1558991344]

言語:

英語

請求記号:

M23500/240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015724
シリーズID:	PA00000011
会議名:	Symposium on advanced III-V compound semiconductor growth, processing and devices
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.05

類似資料:

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2 国際会議録 Magnetron Reactive Ion Etching of III-V Nitride Semiconductors McLane, G.F., Pearton, S.J., Abernathy, C.R. Electrochemical Society	8 国際会議録 Ge OPTICAL INTERCONNECTS ON A GaAs SURFACE Dubey, M., McLane, G. F., Jones, K. A., Lareau, R. T., Eckart, D. W., Han, W. Y., Roberts, C., Dunkel, J., West, L. C. MRS - Materials Research Society
3 国際会議録 A PROCESS MODEL FOR REACTIVE ION ETCHING AND STUDY OF THE EFFECTS OF MAGNETRON ENHANCEMENT Meyyappan, M., Buggeln, R.C. Materials Research Society	9 国際会議録 SURFACE AND INTERFACE DAMAGE CHARACTERIZATION OF REACTIVE ION ETCHED MBE REGROWN GaAs Cole, M.W., Dutta, M., Rossabi, J., Smith, D.D., Lehman, J.L. Materials Research Society
4 国際会議録 In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon Lee, J. W., Pearton, S. J., Abernathy, C. R., Vawter, G. A., Shul, R. J., Bridges, M. M., Willison, C. G. MRS - Materials Research Society	10 国際会議録 OPTIMIZATION OF REACTIVE ION ETCHING PARAMETERS VIA MATERIAL CHARACTERIZATION Cole, M.W., Cooper, C.B., Dutta, M., Wrenn, C.S., Saliman, S., Lee, H.S., Fotiadis, L., Saunders, M-L., Chang, W.H. Materials Research Society
5 国際会議録 OHMIC CONTACTS TO HEAVILY CARBON-DOPED p+-GaAs USING Ti/Si/Pd Lee, H. S., Han, W. Y., Lu, Y., Cole, M. W., Lareau, R. T., Casas, L., Thompson, R. J., DeAnni, A., Jones, K. A., Yang, … Materials Research Society	11 国際会議録 DAMAGE INTRODUCED BY CH4/H2 REACTIVE ION ETCHING IN PSEUDOMORPHIC AlGaAs/InGaAs MODFETs Pereira, R., Van Hove, M., De Raedt, W., Van Hoof, C., Broghs, G., Van Rossum, M., Braspenning, R. H., Eijkemans, T. J., … Materials Research Society
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