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DIRECT EVIDENCE FOR INTERSTITIAL CARBON IN HEAVILY CARBON-DOPED GaAs

著者名:
Hofler, G. E.
Klatt, J.
Baillargeon, J. N.
Averback, R. S.
Cheng, K. Y.
Hseih, K. C.
さらに 1 件
掲載資料名:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
240
発行年:
1992
開始ページ:
51
終了ページ:
56
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
言語:
英語
請求記号:
M23500/240
資料種別:
国際会議録

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