*LOW TEMPERATURE GROWTH OF GaAs AND AlGaAs BY MOMBE

*LOW TEMPERATURE GROWTH OF GaAs AND AlGaAs BY MOMBE

著者名:

掲載資料名:

Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

240

発行年:

1992

開始ページ:

3

終了ページ:

14

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991347 [1558991344]

言語:

英語

請求記号:

M23500/240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015724
シリーズID:	PA00000011
会議名:	Symposium on advanced III-V compound semiconductor growth, processing and devices
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.05

類似資料:

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2 国際会議録 GROWTH OF GaAs AND AlGaAs BY MOMBE USING PHENYLARSINE Abernathy, C. R., Wisk, P., Pearton, S. J., Ren, F., Bohling, D. A., Muhr, G. T. Materials Research Society	8 国際会議録 InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE Ren, F., Abernathy, C.R., Pearton, S.J., Wisk, P.W., Esagui, R. Materials Research Society
3 国際会議録 THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE Abernathy, C.R., Song, J., Hobson, W.S., Pearton, S.J., Ren, F., Bohling, D.A., Muhr, G.T. Materials Research Society	9 国際会議録 COMPARISON OF LOW TEMPERATURE PHOTOLUMINESCENCE OF BULK MBE GROWN AlGaAs AND GaAs USING A GRAPHITE GENERATED DIMER VERSUS A STANDARD TETRAMER ARSENIC GROUP-V … Brennan, Thomas M., Hammons, B. E., Smith, M. C., Jones, E. D. Materials Research Society
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