STRAIN DEPENDENT DIFFUSION IN THE DRY THERMAL OXIDATION PROCESS OF CRYSTALLINE Si

STRAIN DEPENDENT DIFFUSION IN THE DRY THERMAL OXIDATION PROCESS OF CRYSTALLINE Si

著者名:

掲載資料名:

Thin films : stresses and mechanical properties III : symposium held December 2-5, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

239

発行年:

1992

開始ページ:

81

終了ページ:

86

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991330 [1558991336]

言語:

英語

請求記号:

M23500/239

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015723
シリーズID:	PA00000011
会議名:	Symposium on thin films
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.05

類似資料:

1 国際会議録 STRESS GRADIENTS IN SiO2 THIN FILMS PREPARED BY THERMAL OXIDATION AND SUBJECTED TO RAPID THERMAL ANNEALING Bjorkman, C. H., Fitch, J. T., Lucovsky, G. Materials Research Society	7 国際会議録 Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 … Lucovsky, G., Hinds, B. MRS - Materials Research Society
2 国際会議録 INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES Bjorkman, C.H., Lee, D.R., Lucovsky, G. Materials Research Society	8 国際会議録 Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing Hattangady, S. V., Niimi, H., Gandhi, S., Lucovsky, G. MRS - Materials Research Society
3 国際会議録 Diffusion Of Hydrogen And Deuterium In Stack Systems Of SixNyH2/SixNyDz, And Crystalline Si Boehme, C., Lucovsky, G. Materials Research Society	9 国際会議録 STUDIES OF MOS HETEROJUNCTION DEVICES USING DOPED μc-Si AND a-Si Lee, D.R., Bjorkman, C.H., Wang, C., Lucovsky, G. Materials Research Society
4 国際会議録 DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD) Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G. Materials Research Society	10 国際会議録 THE EFFECT OF INTRINSIC IN-PLANE STRESS ON THE LOCAL ATOMIC STRUCTURE OF THEMALLY GROWN SIO2 Fitch, J.T., Bjorkman, C.H., Sumakeris, J.J., Lucovsky, G. Materials Research Society
5 国際会議録 A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111) Yasuda, T., Lee, D. R., Bjorkman, C. H., Ma, Y., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K., Kurz, H. MRS - Materials Research Society	11 国際会議録 SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING Ma, Y., Hattangady, S. V., Yasuda, T., Niimi, H., Gandhi, S., Lucovsky, G. MRS - Materials Research Society
6 国際会議録 Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature … Lucovsky,G., Niimi,H. Trans Tech Publications	12 国際会議録 Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and … Ma, Y., Yasuda, T., Lucovsky, G. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12