Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS

著者名:

掲載資料名:

Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

235

発行年:

1992

開始ページ:

799

終了ページ:

806

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991293 [1558991298]

言語:

英語

請求記号:

M23500/235

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015719
シリーズID:	PA00000011
会議名:	Symposium on phase formation and modification by beam-solid interactions
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.06

類似資料:

1 国際会議録 Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G. Materials Research Society	7 国際会議録 INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES Yasuda, T., Lucovsky, G. Materials Research Society
2 国際会議録 LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS Yasuda, T., ma, Y., Lucovsky, G. Materials Research Society	8 国際会議録 COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE … Yasuda, T., Ma, Y., Habermechl, S., Lucovsky, G. Materials Research Society
3 国際会議録 Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and … Ma, Y., Yasuda, T., Lucovsky, G. MRS - Materials Research Society	9 国際会議録 Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition Habermehl, S., Lucovsky, G. American Institute of Chemical Engineers
4 国際会議録 A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES … Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G. Materials Research Society	10 国際会議録 CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J. MRS - Materials Research Society
5 国際会議録 SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD) Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G. Materials Research Society	11 国際会議録 CONTROL OF PROCESS-INDUCED DEFECTS IN THE FORMATION OF SINGLE AND MULTIPLE LAYER DIELECTRIC STRUCTURES FOR Si SEMICONDUCTOR DEVICES He, S. S., Stephens, D. J., Ma. Y., Yasuda, T., Habermehl, S., Lucovsky, G. Materials Research Society
6 国際会議録 QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S. Materials Research Society	12 国際会議録 A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111) Yasuda, T., Lee, D. R., Bjorkman, C. H., Ma, Y., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K., Kurz, H. MRS - Materials Research Society

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