EVOLUTION OF BURIED OXIDE “PIPE” DEFECTS UPON IMPLANTATION THROUGH PARTICLES IN SIMOX MATERIAL

EVOLUTION OF BURIED OXIDE “PIPE” DEFECTS UPON IMPLANTATION THROUGH PARTICLES IN SIMOX MATERIAL

著者名:

掲載資料名:

Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

235

発行年:

1992

開始ページ:

153

終了ページ:

158

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991293 [1558991298]

言語:

英語

請求記号:

M23500/235

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015719
シリーズID:	PA00000011
会議名:	Symposium on phase formation and modification by beam-solid interactions
回次:	1991
会議開催地:	Boston, MA, USA
会議開催年:	1991.12.02-1991.12.06

類似資料:

1 国際会議録 “EQUILIBRIUM OXIDE” FEATURES OF THE SIMOX PROCESS Hosack, H. H., Hollingsworth, J., El-Ghor, M. K., Joyner, K. A. Materials Research Society	7 国際会議録 CHARACTERIZATION AND EVOLUTION OF MICROSTRUCTURES FORMED BY HIGH DOSE OXYGEN IMPLANTATION OF SILICON El-Ghor, M.K., Pennycook, S.J., Sjoreen, T.P., Narayan, J. Materials Research Society
2 国際会議録 Electrochemical analysis of SIMOX buried oxides Allen, L P, Anc, M J, Duffy, M, Parechanian, J H, Yap, J H Electrochemical Society	8 国際会議録 High current injected charge-to-breakdown characteristics of thin gate oxide on SIMOX SOI having different buried oxide thicknesses Seo, J-H, Woo, J C, Mendicino, M, Vasudev, P K Electrochemical Society
3 国際会議録 Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film Seol,K.S., Ieki,A., Ohki,Y., Nishikawa,H., Tachimori,M. Trans Tech Publications	9 国際会議録 EFFECT OF ITOX-PROCESS ON THE ELECTRICAL CHARACTERISTICS OF BURIED OXIDE IN LOW-DOSE SIMOX Hamada, K., Hamajima, T., Kitano, T., Ohnishi, H., Yoshino, A. Electrochemical Society
4 国際会議録 Si ION IMPLANTATION FOR SECONDARY DEFECT REDUCTION IN SIMOX MATERIAL Ellingboe, S. L., Ridgway, M. C. MRS - Materials Research Society	10 国際会議録 Improvement of SIMOX buried oxide breakdown voltage by multiple step and multiple energy implantation Gassel, H., Vogt, H. Electrochemical Society
5 国際会議録 Infrared absorption study of buried oxides of single and triple implanted SIMOX structures Lisovskii, I P, Revesz, A G, Hughes, H L Electrochemical Society	11 国際会議録 EVIDENCE FOR OXYGEN CONCENTRATION CHANGES INDUCED BY LOW-TEMPERATURE 0-18 IMPLANTATION INTO A SIMOX BURIED-OXIDE LAYER Scalon, P. J., Hemment, P. L. F., Robinson, A. K., Reeson, K. J., Chater, R. J., Kilner, J. A., Harbeke, G. Materials Research Society
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