LATERAL UNIFORMITY OF ULTRA-SHALLOW JUNCTIONS FORMED BY RAPID THERMAL ANNEALING IN POLYSILICON-ON-SILICON SYSTEMS

LATERAL UNIFORMITY OF ULTRA-SHALLOW JUNCTIONS FORMED BY RAPID THERMAL ANNEALING IN POLYSILICON-ON-SILICON SYSTEMS

著者名:

掲載資料名:

Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

224

発行年:

1991

開始ページ:

329

終了ページ:

334

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991187 [1558991182]

言語:

英語

請求記号:

M23500/224

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015708
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.30-1991.05.03

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2 国際会議録 SECONDARY GRAIN GROWTH IN HEAVILY DOPED POLYSILICON DURING RAPID THERMAL ANNEALING Batra, S., Park, K., Lobo, M., Banerjee, S. Materials Research Society	8 国際会議録 Device Characteristics of Ultra-Shallow Junctions Formed by fRTP Annealing Satta, A., Lindsay, R., Severi, S., Henson, K., Maex, K., McCoy, S., Gelpey, J., Elliott, K. Materials Research Society
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