Blank Cover Image

INVESTIGATION OF METAL INDUCED SURFACE DEFECTS IN CZOCHRALSKI Si FOLLOWING RAPID THERMAL PROCESSING BY THERMAL WAVE MODULATED REFLECTANCE METHOD

著者名:
Hahn, S.
Smith, W. L.
Suga, H.
Park, J. G.
Lim, C. S.
Kwak, Y.-S.
Meinecke, R.
Kola, R. R.
Rozgonyi, G. A.
Kwack, K. D.
さらに 5 件
掲載資料名:
Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
224
発行年:
1991
開始ページ:
81
終了ページ:
88
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991187 [1558991182]
言語:
英語
請求記号:
M23500/224
資料種別:
国際会議録

類似資料:

1 国際会議録 Convetional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon

Susi,E., Poggi,A., Fabbri,R., Lulli,G., Adegboyega,A.G.

Trans Tech Publications
7 国際会議録 Deep Level Transient Spectroscopy Study of Dislocations and Related Defects in SiGe/Si Heterostructures

J. Lu, Y. Park, G. Rozgonyi

Electrochemical Society
2 国際会議録 ELECTRICAL CHARACTERIZATION OF SILICON WITH BURIED DEFECTS

Honeycutt, J., Radzimski, Z., Kola, R. R., Salih, A. S. M., Rozgonyi, G. A.

Materials Research Society
8 国際会議録 In Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

Cho, C. R., Yarykin, N., Rozgonyi, G. A., Zuhr, R. A.

MRS - Materials Research Society
3 国際会議録 DEFECT AND DOPANT CONTROL DURING SILICON EPITAXY USING B AND Ge

Kola, R. R., Posthill, J. B., Salih, A. S. M., Rozgonyi, G. A., Bean, K. E., Lindberg, K.

Materials Research Society
9 国際会議録 Structural modifications of amorphized silicon surfaces following picosecond laser irradiation

Rozgonyi, G.A., Baumgart, H., Phillipp, F., Uebbing, R., Oppolzer, H.

North Holland
4 国際会議録 SPECTROSCOPIC INVESTIGATION OF ARSENIC-INDUCED SURFACE DEFECTS IN HIGH-DOSE As+ IMPLANTED RAPID THERMAL ANNEALED SILICON

Kumar, R., Chaussemy, G., Roura, P., Laugier, A.

Materials Research Society
10 国際会議録 In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

Cho, C. R., Brown, R. A., Kononchuk, O., Yarykin, N., Rozgonyi, G., Zuhr, R.

MRS - Materials Research Society
5 国際会議録 Thermally Induced Dislocation and Slip Defects in Silicon

Cho, C.R., Kim, Y.S., Lee, J.K., Ko, S.W., Choi, D.J., Son, C.B., Stephens, A.E., Rozgonyi, G.A.

Electrochemical Society
11 国際会議録 COP Induced Isolation Failures in Cz Wafers

Lee, G.S., Kwack, K.D., Park, J.G., Park, J.M., Shim, T.H.

Electrochemical Society
6 国際会議録 The Role of Metal and Passivation Defects in Electromigration-Induced Damage in Thin Film Conductors

Lloyd, J. R., Smith, P. M., Prokop, G. S.

North-Holland
12 国際会議録 EFFECTS OF SILICON ION IMPLANTATION UPON THIN GATE OXIDE INTEGRITY

Lee, G.-S., Park, J. -G., Choi, S. -P., Shin, C.-H,, Sun, Y.-B, Kwak, Y.-S., Shin, C.-K., Smith, W. L., Hahn, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12