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A NEW APPROACH FOR LOW DEFECT DENSITY GaAs ON PATTERNED Si SUBSTRATES BY MOCVD

著者名:
Karam, N. H.
Haven, V.
Ismail, K.
Legoues, F.
Carter, J.
Smith, Henry I.
さらに 1 件
掲載資料名:
Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
221
発行年:
1991
開始ページ:
399
終了ページ:
404
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991156 [1558991158]
言語:
英語
請求記号:
M23500/221
資料種別:
国際会議録

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