SiGe HETEROJUNCTION BIPOLAR TRANSISTORS
- 著者名:
Arienzo, Maurizio Comfort, James H. Crabbe, Emmanuel F. Harame, David L. Iyer, Subramanian S. Meyerson, Bernard S. Patton, Gary L. Stork, Johannes M.C. Sun, Yuan-chen - 掲載資料名:
- Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 220
- 発行年:
- 1991
- 開始ページ:
- 421
- 終了ページ:
- 432
- 総ページ数:
- 12
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991149 [155899114X]
- 言語:
- 英語
- 請求記号:
- M23500/220
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Materials Research Society |
Kluwer Academic Publishers |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
Electrochemical Society |
Electrochemical Society |
6
国際会議録
Copper-Based Ohmic Contacts for the SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure
MRS - Materials Research Society |
Kluwer Academic Publishers |