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HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN MODULATION-DOPED Si/SiGe HETEROSTRUCTURES

著者名:
掲載資料名:
Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
220
発行年:
1991
開始ページ:
403
終了ページ:
408
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991149 [155899114X]
言語:
英語
請求記号:
M23500/220
資料種別:
国際会議録

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